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| SUM110N08-07P Vishay Siliconix N-Channel 75-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () 0.007 at VGS = 10 V ID (A) 110d Qg (Typ.) 69 FEATURES * TrenchFET(R) Power MOSFETS * 100 % Rg and UIS Tested APPLICATIONS * Synchronous Rectification RoHS COMPLIANT TO-263 D G G DS S Ordering Information: SUM110N08-07P-E3 (Lead (Pb)-free) N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 C) Pulsed Drain Current Avalanche Current Single Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 C TA = 25 Cc TC = 25 C TC = 70 C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 75 20 110d 103 180 50 125 208.3b 3.75 - 55 to 150 mJ W C A Unit V THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount) Junction-to-Case (Drain) Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). d. Package limited. c Symbol RthJA RthJC Limit 40 0.6 Unit C/W Document Number: 68637 S-81049-Rev. A, 12-May-08 www.vishay.com 1 SUM110N08-07P Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Time Rise Timec Turn-Off Delay Time Fall Timec Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge c c Symbol VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf b Test Conditions VDS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 75 V, VGS = 0 V VDS = 75 V, VGS = 0 V, TJ = 125 C VDS = 75 V, VGS = 0 V, TJ = 150 C VDS 10 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125 C VDS = 15 V, ID = 20 A Min. 75 2.5 Typ. Max. Unit 4.5 250 1 50 250 V nA A A 70 0.0057 0.0092 43 4250 0.007 0.0112 S VGS = 0 V, VDS = 30 V, f = 1 MHz 580 230 69 105 pF VDS = 30 V, VGS = 10 V, ID = 50 A f = 1 MHz VDD = 30 V, RL = 0.6 ID 50 A, VGEN = 10 V, Rg = 1 23 21 1.2 17 5 22 6 2.4 30 10 40 15 nC ns Source-Drain Diode Ratings and Characteristics TC = 25 C IS ISM VSD trr IRM(REC) Qrr 110 180 IF = 20 A, VGS = 0 V IF = 75 A, dI/dt = 100 A/s 0.83 65 2.5 85 1.5 100 5 150 A V ns A nC Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 68637 S-81049-Rev. A, 12-May-08 SUM110N08-07P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 180 VGS = 10 thru 9 V 150 I D - Drain Current (A) VGS = 8 V 180 150 I D - Drain Current (A) 120 120 90 VGS = 7 V 60 90 60 TC = 125 C 30 VGS = 6 V 0 0 1 2 3 4 5 30 TC = 25 C TC = - 55 C 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 1.5 100 Transfer Characteristics TC = - 55 C g fs -- Transconductance (S) 1.2 I D - Drain Current (A) 80 0.9 60 TC = 25 C TC = 125 C 0.6 TC = 25 C 0.3 TC = 125 C TC = - 55 C 0.0 0 2 4 6 8 10 40 20 0 0 14 28 42 56 70 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 0.008 0.05 Transconductance ID = 20 A R DS(on) - On-Resistance () 0.007 R DS(on) - On-Resistance () 0.04 0.03 0.006 VGS = 10 V 0.02 TJ = 150 C 0.01 TJ = 25 C 0.005 0.004 0 20 40 60 80 100 120 0.00 5 6 7 8 9 10 ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Document Number: 68637 S-81049-Rev. A, 12-May-08 On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 SUM110N08-07P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 6000 10 ID = 50 A VGS - Gate-to-Source Voltage (V) 4500 C - Capacitance (pF) Ciss 8 VDS = 30 V VDS = 60 V 6 VDS = 15 V 3000 4 1500 Coss Crss 0 15 30 45 60 75 2 0 0 0 20 40 60 80 Qg - Total Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Capacitance 2.0 ID = 20 A 1.7 R DS(on) - On-Resistance VGS = 10 V (Normalized) 1.4 I S - Source Current (A) 10 100 Gate Charge TJ = 25 C TJ = 150 C 1 1.1 0.1 TJ = - 55 C 0.8 0.01 0.5 - 50 - 25 0 25 50 75 100 125 150 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature 0.7 92 Source-Drain Diode Forward Voltage 0.2 VBR(DSS) (Normalized) 88 ID = 1 mA VGS(th) Variance (V) - 0.3 ID = 1 mA - 0.8 ID = 250 A - 1.3 84 80 - 1.8 - 2.3 - 50 - 25 0 25 50 75 100 125 150 76 - 50 - 25 0 25 50 75 100 125 150 TJ - Temperature (C) TJ - Junction Temperature (C) Threshold Voltage On-Resistance vs. Junction Temperature www.vishay.com 4 Document Number: 68637 S-81049-Rev. A, 12-May-08 SUM110N08-07P Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 100 1000 Limited by RDS(on)* 100 I D - Drain Current (A) 10 s 100 s 1 ms 10 10 ms 100 ms, DC 1 I DAV (A) 150 C 10 25 C 0.1 TC = 25 C Single Pulse BVDSS 1 0.00001 0.0001 0.001 0.01 TAV (s) 0.1 1.0 0.01 0.1 1 10 100 Single Pulse Avalanche Current Capability vs. Time 150 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Case 120 I D - Drain Current (A) 90 Package Limited 60 30 0 0 25 50 75 100 125 150 TC - Case Temperature (C) * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating*, Junction-to-Case 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68637. Document Number: 68637 S-81049-Rev. A, 12-May-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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